High-density MIM capacitors using AlTaO_x dielectrics

Abstract

The authors have obtained good MIM capacitor integrity of high-capacitance density of 10 fF/μm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> using high-/spl kappa/ AlTaO/sub x/ fabricated at 400/spl deg/C. In addition, small voltage dependence of capacitance of <600 ppm (quadratic voltage coefficient of only 130 ppm/V <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> ) is obtained at 1 GHz using their mathematical derivation from measured high-frequency S parameters. These good results ensure the high-/spl kappa/ AlTaO/sub x/ MIM capacitor technology is useful for high-precision circuits operated at the RF frequency regime.