High conversion efficiency and high radiation resistance InP homojunction solar cells

Abstract

InP homojunction solar cells have been fabricated using thermal diffusion of sulphur or selenium into p-type InP substrates. A conversion efficiency of 16.5% (active area) was obtained for a S-diffused cell under simulated AM1.5 illumination. The InP solar cell was found for the first time to have a higher resistance to γ-ray radiation degradation than Si and GaAs solar cells with comparable junction depth. These results show a possibility of the InP solar cells for space applications.