LPE growth of GaInAsSb/GaSb system: The importance of the sign of the lattice mismatch

Thickness and surface morphology of GaAs LPE layers grown by supercooling, step-cooling, equilibrium-cooling, and two-phase solution techniques

J. J. Hsieh · Journal of Crystal Growth · 1974 · 214 citations

Materials Science, Two-phase Solution Techniques, Engineering +7

Thickness and surface morphology of GaAs LPE layers grown by supercooling, step-cooling, equilibrium-cooling, and two-phase solution techniques

J. J. Hsieh · Journal of Crystal Growth · 1974 · 161 citations

Materials Science, Two-phase Solution Techniques, Engineering +7

Phase equilibria in III–V quaternary systems—application to Al-Ga-P-As

M. Ilegems, M. B. Panish · Journal of Physics and Chemistry of Solids · 1974 · 122 citations

Engineering, Phase Equilibrium, Phase Equilibria +4

Phase equilibria in the system Al–Ga–As–Sn and electrical properties of Sn-doped liquid phase epitaxial Al<i>x</i>Ga1−<i>x</i>As

M. B. Panish · Journal of Applied Physics · 1973 · 76 citations

Materials Engineering, Materials Science, Electrical Engineering +15

Growth and dissolution kinetics of III-V heterostructures formed by LPE

M. B. Small, R. Ghez · Journal of Applied Physics · 1979 · 76 citations

Materials Science, Ii-vi Semiconductor, Equilibrium Phase Diagram +15