Electronics Letters · 1999 · 34 citations · 6 references
EngineeringElectrical EngineeringMaterials ScienceOptical MaterialsOptoelectronicsPhotonicsLaser DiodesLaser PhysicsSemiconductor HeterostructuresSemiconductor LasersWide Band Gap SemiconductorsWide-bandgap SemiconductorsDifferential Quantum EfficiencyExternal Quantum EfficiencyHeterostructure LasersHeterostructuresHigh-power LasersHigh-power Semiconductor LasersInterband Cascade LasersQuantum Efficiency
Mid-IR (3.8 –3.9 µm) interband cascade lasers based on InAs/GaInSb heterostructures have been demonstrated at temperatures up to 210 K. The authors have observed a peak optical output power of ~2 W/facet from one device at 80 K, and from another device at 150 K, a slope of 735 mW/A per facet, corresponding to a differential external quantum efficiency of 456%.
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Jérôme Faist, Federico Capasso, Deborah L. Sivco et al. · Science · 1994 · 4.5K citations
Type-II interband quantum cascade laser at 3.8 µm
Chih‐Hsiang Lin, Rui Q. Yang, D. Zhang et al. · Electronics Letters · 1997 · 149 citations