Applied Physics Letters · 1993 · 22 citations · 2 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsIii-v SemiconductorsOptical ModulatorsOptical Properties Of SemiconductorsSemiconductor Device MaterialsSemiconductor HeterostructuresThin Film Optical PropertiesDevice FabricationHeterojunctionsHeterostructure DevicesMolecular Beam EpitaxyOptical Absorption CoefficientReflectanceSemiconductor HeterojunctionsSemiconductor Optical Modulators
An AlGaAs/GaAs optical hetero-nipi modulator based on band filling effect with interdigital selective contacts has been fabricated by use of shadow mask molecular beam epitaxy (MBE) regrowth technique. There is a five order of magnitude change in I-V characteristics from forward to reverse junction bias, which indicates the high quality of the interdigital contacts. The measured reflectance spectra show a change of the absorption coefficient of about 7850 cm−1 with an applied bias voltage as low as 1.5 V.
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Room-Temperature Optical Nonlinearities in GaAs
Y. H. Lee, Arturo Chavez-Pirson, S. W. Koch et al. · Physical Review Letters · 1986 · 243 citations