Thermoelectric devices using InN and Al1−xInxN thin films prepared by reactive radio-frequency sputtering

Abstract

We have fabricated thermoelectric devices using InN and Al0.25In0.75N prepared by radio-frequency sputtering. The devices are composed of (a) Al0.25In0.75N–chromel of 20 pairs on SiO2 glass, (b) InN–chromel of 20 pairs on SiO2 glass, and (c) InN-chromel of 20 pairs on polyimide film. The maximum output power and the open output voltage were (a) 1.6×10−6W and 0.21V at the temperature difference ΔT=345K, 263×10−12W and 2.7×10−3V at ΔT=4.8K, (b) 3.9×10−6W and 0.22V at ΔT=332K, 282×10−12W and 2.4×10−3V at ΔT=4.1K, and (c) 0.33×10−6W and 0.089V at ΔT=280K, 63×10−12W and 1.4×10−3V at ΔT=4.5K, respectively.