Vertically well-aligned epitaxial Ni31Si12 nanowire arrays with excellent field emission properties

Abstract

Vertically well-aligned single crystal Ni31Si12 nanowire (NW) arrays were epitaxially grown on Ni31Si12 films preferentially formed on Ni foil substrates with a simple vapor phase deposition method in one step. The Ni31Si12 NWs are several micrometers in length and 50–80 nm in diameter. The resistivities of the Ni31Si12 NWs were measured to be 51 μΩ cm by four-terminal electrical measurement. The NWs can carry very high currents and possess excellent field emission properties. The growth of vertically well-aligned Ni31Si12 NW arrays shall lead to significant advantages in the fabrication of vertical Si nanodevices.