Aluminum nitride on silicon surface acoustic wave devices

Abstract

Reactive rf planar magnetron sputtering has been used at substrate temperatures below 300 °C to deposit highly oriented piezoelectric AlN films on silicon for surface acoustic wave device applications. The substrates were (100)-oriented, n-type silicon with and without a thermally grown oxide. Several new AlM-on-silicon surface acoustic wave devices were fabricated and tested. The devices reported herein include two-port delay lines, degenerate monolithic convolvers, and two-port surface acoustic wave resonators utilizing metal strip reflector arrays.