Infrared absorption of silicon irradiated by protons

Abstract

Abstract Hydrogen implantations into silicon samples at room temperature and at 190°C are carried out. Infrared studies are performed on these samples before and following annealing. Previously observed divacancy and hydrogen vibrational bands are found as well as higher‐order‐bands not previously found in proton irradiation. In addition new hydrogen vibrational bands and other bands are observed and discussed.