Interfacial reaction between silicon nitride and aluminium

Abstract

Abstract The microstructure of a silicon nitride/aluminium interface has been identified by analytical transmission electron microscopy. HIPed silicon nitride without any additive was bonded by pure aluminium at 800°C for 15 min. A thin (∼ 5000 Å) reaction layer was recognized at the interface. It consisted of two regions. One an amorphous layer facing the aluminium; it contained aluminium, silicon and oxygen. The other was on the silicon nitride side and consisted of fine particles which were less than 100 Å in diameter. These particles were considered to have β'-sialon type structure.