Schottky barrier heights of W on Si1−<i>x</i>Ge<i>x</i> alloys

Abstract

The Schottky barrier height of W on p-type Si1−xGex/Si has been investigated as a function of composition (10%≤x≤33%) and Si1−xGex thickness for a given composition. The barrier height decreases with increasing Ge fraction and follows the rate of strain relaxation. These results suggest that the Fermi level at the interface is pinned relative to the conduction band.