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Photoluminescence of Al<sub>x</sub>Ga<sub>1-x</sub>As/Al<sub>y</sub>Ga<sub>1-y</sub>As Multiguantum Wells Grown by Pulsed Molecular Beam Epitaxy
30
Citations
5
References
1983
Year
Wide-bandgap SemiconductorAluminium NitrideElectrical EngineeringPhotoluminescenceEngineeringPhysicsPeak Emission EnergyApplied PhysicsMultiguantum Wells GrownGallium OxideMultiquantum WellsMolecular Beam EpitaxyLuminescence PropertyOptoelectronicsCategoryiii-v SemiconductorCompound SemiconductorEmission Energy
Multiquantum wells (MQW) with a structure of Al x Ga 1- x As/Al y Ga 1- y As were grown by pulsed molecular beam epitaxy in order to raise the emission energy in MQW of the AlGaAs system. Sharp photoluminescence spectra indicate the high quality of MQW structure and the peak emission energy agreed with the calculated value of n =1 electron and hole transition.
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