Applied Physics Letters · 2013 · 64 citations · 11 references
EngineeringElectrical EngineeringMaterials EngineeringElectronic MaterialsMicroelectronicsSemiconductor DevicesCarrier TransportCharge Carrier TransportElectron TransportHigh-dose Radiation EffectsRadiation Transport In MatterSemiconductor ReliabilityCarrier Transport MechanismsElectronic TransportGallium Nitride (Gan) MaterialsGamma Irradiation EffectsHigh-electron-mobility TransistorsRadiation DefectsRadiation EffectsRadiation-induced Defects
AlGaN/GaN high electron mobility transistors were irradiated with 60Co gamma-rays to doses up to 1000 Gy, in order to analyze the effects of irradiation on the devices' transport properties. Temperature-dependent electron beam-induced current measurements, conducted on the devices before and after exposure to gamma-irradiation, allowed for the obtaining of activation energies related to radiation-induced defects due to nitrogen vacancies. DC current-voltage measurements were also conducted on the transistors to assess the impact of gamma-irradiation on transfer, gate, and drain characteristics.
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Defect Donor and Acceptor in GaN
D. C. Look, D. C. Reynolds, J. W. Hemsky et al. · Physical Review Letters · 1997 · 430 citations
Radiation hardness of gallium nitride
A. Ionascut-Nedelcescu, C. Carlone, A. Houdayer et al. · IEEE Transactions on Nuclear Science · 2002 · 343 citations