The eight-level k sdot p model for the conduction and valence bands of InAs, InP, InSb

Abstract

We present a generalized theoretical description of the 30 × 30 k ⋅ p approach for determining the band structure of the direct-band-gap semiconductors (InAs, InP, InSb), including the d far-levels contribution. For all materials investigated, the resulting electronic band structure parameters are in good agreement with experimental values. This model gives access to the second conduction band which is useful for transport modelling. We finally show that this method also gives explicit expressions for the Luttinger parameters, the κ valence band parameter and the effective masses in the Γ valley.