An X-band to Ka-band SPDT switch using 200 nm SiGe HBTs

Abstract

This paper presents the design and measured performance of an X-band to Ka-band SiGe HBT SPDT switch. The proposed SPDT switch was fabricated using a 200 nm, 150 GHz peak f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) BiCMOS technology. The SPDT switch design uses diode-connected SiGe HBTs in a series-shunt configuration to improve the switch bandwidth and isolation. Between 8 and 40 GHz, this SPDT switch achieves an insertion loss of less than 4.3 dB, an isolation of more than 20.3 dB, and a return loss of more than 9 dB.