Metal-insulator transition above room temperature in maximum colossal magnetoresistance manganite thin films

X. J. Chen, H.‐U. Habermeier, Hao Zhang, Grace X. Gu, M. Varela, J. Santamarı́a, C. C. Almasan

Physical Review B · 2005 · 64 citations · 22 references

Concepts

Abstract

It has been suggested that the maximum magnitude of colossal magnetoresistance occurs in mixed-valent manganites with a tolerance factor $t=0.96$ [Zhou, Archibald, and Goodenough, Nature (London) 381, 770 (1996)]. However, at $t\ensuremath{\approx}0.96$ most manganites have relatively low values of the metal-insulator transition temperature ${T}_{MI}\phantom{\rule{0.3em}{0ex}}(\ensuremath{\sim}60\text{--}150\phantom{\rule{0.3em}{0ex}}\mathrm{K})$. Here, we report that a 50 \AA{} ${\mathrm{La}}_{0.9}{\mathrm{Sr}}_{0.1}{\mathrm{MnO}}_{3}$ thin film with $t=0.96$ grown on a (100) ${\mathrm{SrTiO}}_{3}$ substrate has a metal-insulator transition above room temperature, which represents a doubling of ${T}_{MI}$ compared with its value in the bulk material. We show that this spectacular increase of ${T}_{MI}$ is a result of the epitaxially compressive strain-induced reduction of the Jahn-Teller distortion.

References

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