The Influence of Foreign Atoms on the early Stages of SiC Growth on (111)Si - Concepedia

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The Influence of Foreign Atoms on the early Stages of SiC Growth on (111)Si

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2000

Year

Joerg Pezoldt, György Vida, M. Rouhani Laridjani, M. Avérous, T. Wöhner, J. A. Schaefer, Thomas Stauden, G. Ecke, R. Pieterwas, Lothar Spieß

Materials science forum

Materials ScienceMaterials EngineeringEngineeringEarly StagesPhysicsApplied PhysicsSiliceneSemiconductor Device FabricationSilicon On InsulatorForeign AtomsCarbideSic Growth

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