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Electron refraction in ballistic electron-emission microscopy studied by a superlattice energy filter
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Citations
23
References
1998
Year
Wide-bandgap SemiconductorCategoryquantum ElectronicsEngineeringMicroscopyElectron DiffractionBallistic Electron-emission MicroscopyElectron OpticSemiconductorsSuperlattice Energy FilterElectron MicroscopyElectron SpectroscopyMaterials ScienceElectrical EngineeringPhysicsAtomic PhysicsElectron RefractionEnergy FilterSuper-resolutionApplied PhysicsCondensed Matter PhysicsElectron MicroscopeEnergetic Current Distribution
Buried ${\mathrm{Al}}_{0.4}{\mathrm{Ga}}_{0.6}\mathrm{A}\mathrm{s}/\mathrm{G}\mathrm{a}\mathrm{A}\mathrm{s}$ superlattices on Au-GaAs Schottky diodes have been used as an energy filter to study the energetic current distribution in ballistic electron-emission microscopy (BEEM) at room temperature and $T=100\mathrm{K}.$ Due to the large difference in electron masses in Au and GaAs we find that parallel momentum conservation leads to considerable electron refraction at the Au-GaAs interface. As a consequence, the energetic distribution of the ballistic electron current is inverted beyond the Au-GaAs interface and an almost linear behavior of the BEEM spectrum is observed in the energetic regime of the superlattice miniband.
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