Electronics Letters · 1991 · 29 citations · 1 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsHigh-frequency Semiconductor DevicesIii-v SemiconductorsPhotodetectorsSemiconductor DetectorsSemiconductor Device MaterialsSemiconductor HeterostructuresAvalanche GainAvalanche Photodiode DetectorsAvalanche PhotodiodesGain BandwidthGain-bandwidth ProductHeterostructure PhotodetectorsPhotodiodes
A planar separate absorption, grading, charge and multiplication (SAGCM) avalanche photodiode (APD) structure was fabricated, allowing for a thin undoped multiplication layer, without the use of guard rings. A gain-bandwidth (GBW) product in excess of 100 GHz has been measured for the first time.
1