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Planar InP/InGaAs avalanche photodetector with gain-bandwidth product in excess of 100 GHz
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Citations
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References
1991
Year
PhotonicsElectrical EngineeringPlanar Separate AbsorptionEngineeringRf SemiconductorElectronic EngineeringApplied PhysicsAvalanche PhotodiodeGuard RingsPhotoelectric MeasurementPhotonic Integrated CircuitMicroelectronicsMicrowave PhotonicsOptoelectronicsGain-bandwidth Product
A planar separate absorption, grading, charge and multiplication (SAGCM) avalanche photodiode (APD) structure was fabricated, allowing for a thin undoped multiplication layer, without the use of guard rings. A gain-bandwidth (GBW) product in excess of 100 GHz has been measured for the first time.
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