V/III ratio dependence of surface migration length of As4 molecules during molecular beam epitaxy of GaAsP on (411)A GaAs substrates - Concepedia

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V/III ratio dependence of surface migration length of As4 molecules during molecular beam epitaxy of GaAsP on (411)A GaAs substrates

15

Citations

7

References

2003

Year

Yu Higuchi, Masaya Uemura, Yuji Masui, Takahiro Kitada, S. Shimomura, S. Hiyamizu

Journal of Crystal Growth

Electrical EngineeringAs4 MoleculesEngineeringSurface ScienceApplied PhysicsMolecular Beam EpitaxyEpitaxial GrowthCompound SemiconductorSurface Migration LengthV/iii Ratio Dependence

References

	Year	Citations

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