50GHz Ge Waveguide Electro-Absorption Modulator Integrated in a 220nm SOI Photonics Platform

Abstract

We report waveguide-integrated Ge electro-absorption modulators operating at 1615nm wavelength with 3dB bandwidth beyond 50GHz and a capacitance of 10fF.A 2V voltage swing enables 4.6dB DC extinction ratio for 4.1dB insertion loss.