IEEE Transactions on Magnetics · 1987 · 122 citations · 11 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsMagnetic MaterialsThin FilmsAmorphous Magnetic MaterialsCrystallographyMagnetic AnisotropyMagnetic Properties Of SolidsMagnetic Thin FilmsThin Film Magnetic PropertiesAmorphous Magnetic AlloysAmorphous Magnetic FilmsAmorphous Thin FilmsAnisotropyAnisotropy In Thin FilmsMagnetic Anisotropy MeasurementPerpendicular Magnetic AnisotropySingle-ion Anisotropy
To investigate the mechanism of perpendicular magnetic anisotropy K <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">u</inf> in rare earth-transition metal amorphous films, K <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">u</inf> was measured for (Gd <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.75</inf> R <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.25</inf> ) <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">19</inf> Co <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">81</inf> films with varying the rare earth element R. Results were analysed based on a single ion anisotropy model using a point charge approximation. The dependence of K <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">u</inf> on rare earth element is well explained with the single ion anisotropy. A model was proposed in which anelastic deformation during deposition of the film is responsible for the induction of K <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">u</inf> . Magnetostriction can also be explained with a point charge model with screening.
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Intrinsic stress of magnetron-sputtered niobium films
C.-T. Wu · Thin Solid Films · 1979 · 119 citations
Natural Sciences, Materials Engineering, Materials Science +13