Effects of two-dimensional confinement on the optical properties of InGaAs/InP quantum wire structures

Abstract

We describe fabrication and photoluminescence excitation of InGaAs/InP quantum wires with a lateral dimension of ∼350 Å. Transverse confinement results in the splitting of the n=1 heavy hole-electron transition. Three of these levels are observed in the excitation spectrum. The exciton energies agree with the theoretical predictions based on a new method of solving the two-dimensional effective mass Schrödinger equation.