Emission characterization of diamond-coated Si field emission arrays

Abstract

Large-area arrays of Si tips (105–106 tips in an array) with diamond coating were tested in pulse and dc modes. The arrays demonstrated uniform emission, reproducible I–V plots, and low emission threshold. The maximum current achieved with diamond-coated Si arrays was 80 mA in pulse mode. Emission characteristics were found to be superior to the uncoated Si tip arrays or diamond-coated flat cathodes.