Journal of the Physical Society of Japan · 1965 · 36 citations · 2 references
Magnetic PropertiesEngineeringSolid-state ChemistryChemistrySolid SolutionsConduction PhenomenaMaterials ScienceMaterials EngineeringElectrical EngineeringCrystalline DefectsPhysical ChemistrySemiconductor MaterialElemental MetalElectrical PropertyTransition Metal ChalcogenidesMaterial AnalysisApplied PhysicsCondensed Matter PhysicsElectrical ResistivityThermoelectric Power
The electrical resistivity, Hall coefficient and thermoelectric power have been measured over the temperature range from 4.2 to 800°K on Co 1- x Mn x Si(\(x{\lesssim}0.06\)), Co 1- x Cr x Si(\(x{\lesssim}0.04\)) and, Co 1- x Cr x Si(\(x{\lesssim}0.10\)) solid solutions. The specimen is n -type when x =0. With increasing x , the specimens of Co 1- x Ni x Si become more n -type, while in the specimens of Co 1- x Mn x Si and Co 1- x Cr x Si, the contribution of hole conduction in-creases. The experimental data are qualitatively interpreted in terms of the overlapping band structure scheme, which is appropriate for Co 1- x Fe x Si solid solutions. It is concluded that the replacement of cobalt with manganese or chromium produces approximately one hole per atom, while the replacement of cobalt with nickel produces approximately one electron per atom in the solid solutions.
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Max Hansen, K. Anderko, H. W. Salzberg · Journal of The Electrochemical Society · 1958 · 14.8K citations