Carrier trapping in iron-doped GaInP

Abstract

Time-resolved photoluminescence decay caused by carrier trapping to the deep Fe level has been studied in epitaxial GaInP. Carrier trapping time is found to be strongly dependent on the Fe concentration up to 1×1018 cm−3. The electron capture cross section for the neutral iron level Fe3+, evaluated from the luminescence transients, is in the range from 6×10−16 to 1×10−15 cm2 for the temperature interval 70–250 K.