Electron Mobility in II-VI Semiconductors

Abstract

The electron drift mobility in CdS, CdSe, CdTe, ZnS, ZnSe, and ZnTe is calculated by an iterative solution of the Boltzmann equation for lattice scattering. Piezoelectric, deformation-potential acoustic-mode, and polar-mode scattering are included. The acoustic deformation potential appropriate to acoustic-mode scattering appears to be much higher than previously expected.