Applied Physics Letters · 2007 · 13 citations · 9 references
EngineeringMaterials EngineeringMaterials ScienceOptoelectronicsPhotonicsSemiconductor MaterialsOptical Properties Of SemiconductorsQuantum DotsQuantum OptoelectronicsSemiconductor Device MaterialsSemiconductor NanomaterialsSemiconductor PhysicsExcitationPhotoluminescencePhotoluminescence SpectroscopyQuantum Dot MaterialsQuantum Dot PhotophysicsSemiconductor Quantum DotsTemperature DependenceUltrafast Laser Excitation
The authors compared time-integrated and time-resolved photoluminescence (PL) emitted by CdSe quantum dots (QDs) and by CdZnMnSe QDs. An unusual nonmonotonic temperature dependence of the PL shift for CdSe QDs is observed, which they ascribe to delocalization of carriers with increasing temperature. In contrast, PL emitted by CdZnMnSe QDs follows a typical monotonic redshift with temperature and exhibits a smaller temporal redshift with pulsed laser excitation than that observed for CdSe QDs. The authors suggest that the temperature PL dependence observed for CdZnMnSe QDs and the smaller localization process observed in that system arise from the shorter PL lifetime in that system.
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Observation of the "Dark Exciton" in CdSe Quantum Dots
M. Nirmal, David J. Norris, Masaru Kuno et al. · Physical Review Letters · 1995 · 830 citations
Excitons, biexcitons, and phonons in ultrathin CdSe/ZnSe quantum structures
F. Gindele, U. Woggon, W. Langbein et al. · Physical review. B, Condensed matter · 1999 · 120 citations · Full text
Lateral redistribution of excitons in CdSe/ZnSe quantum dots
M. Straßburg, M. Dworzak, H. Born et al. · Applied Physics Letters · 2002 · 52 citations