Improved Performance from Multilayer Quantum Dot Light‐Emitting Diodes via Thermal Annealing of the Quantum Dot Layer

Abstract

Quantum dot light-emitting diodes with high external quantum efficiency and luminous power efficiency are realized through in situ thermal annealing of a quasi-monolayer of colloidal nanocrystals on a crosslinked hole-transport layer. Partial desorption of quantum-dot surface ligands and improved film morphology contribute to better electrical injection from the organic layers to the quantum dots, resulting in a 3 to 4 fold enhancement of device efficiency with emission exclusively from the quantum dots. Supporting information for this article is available on the WWW under http://www.wiley-vch.de/contents/jc_2089/2007/c2373_s.pdf or from the author. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.