Properties of the SiO 2 /SiC interface investigated by angle resolved studies of the Si 2p and Si 1s levels and the Si KLL Auger transitions - Concepedia

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Properties of the SiO 2 /SiC interface investigated by angle resolved studies of the Si 2p and Si 1s levels and the Si KLL Auger transitions

40

Citations

22

References

2003

Year

L. I. Johansson, C. Virojanadara, T. Eickhoff, W. Drube

Surface Science

Materials EngineeringSio 2Si 2PEngineeringPhysicsNanoelectronicsApplied PhysicsCondensed Matter PhysicsSiliceneSemiconductor Device FabricationSilicon On Insulator/Sic InterfaceCarbide

References

	Year	Citations

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