GaSb Prepared from Nonstoichiometric Melts

Abstract

Gallium antimonide single crystals have been prepared from melts ranging in composition from nearly stoichiometric to Sb/Ga atom ratios of about 3/1. P‐type and, by suitable impurity additions, have been produced with superior electrical properties. The residual acceptor concentration has been reduced to the order of by the growth of crystals from antimony‐rich melts. Hole mobilities at 78°K of 6000 cm2/volt‐sec and electron mobilities of over 10,000 cm2/volt‐sec have been realized.