Analog, RF, and ESD device challenges and solutions for 14nm FinFET technology and beyond

Abstract

Fin-based analog, passive, RF and ESD devices have serious performance challenges, such as poor ideality, higher leakage, low breakdown voltage (BV) of diodes, BJTs with poor ideality, mismatch, weak re-surf action and low drain current(I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">d</sub> /μm) of Laterally diffused MOS (LDMOS), degraded RF and 1/f noise of analog CMOS, etc. Innovative solutions which maintain process simplicity and low cost are described in this paper. These new device designs demonstrate excellent performance, such as near perfect-ideality(η)≈1.01 diodes, low leakage, high BV, and BJTs with excellent analog behavior. Fin-based LDMOS and ESD devices outperform conventional planar devices in terms of I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">d</sub> /μm and ESD human body model (HBM) performance, respectively.