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Step-height mixtures on vicinal Si(111) surfaces
52
Citations
19
References
1992
Year
EngineeringMicroscopyElectron DiffractionSilicon On InsulatorTunneling MicroscopyTunnelingSiliceneSurface ReconstructionMaterials SciencePhysicsVicinal SiSurface CharacterizationEnergetic Ground StateSurfaces Reveal MixturesDiffraction SignatureSurface ScienceCondensed Matter PhysicsApplied PhysicsScanning Probe MicroscopySurface Analysis
Scanning tunneling microscopy (STM) and high resolution low-energy electron diffraction measurements on vicinal (stepped) Si(111) surfaces reveal mixtures of single- and triple-layer-height steps, with the density of triples increasing with total step density. The diffraction signature of the step mixtures is an incommensurate spacing; however, the STM data show no periodic sequence of singles and triples. Instead, there is a random sequence with specific ratios of the lengths of terraces bounded by steps of different heights, quantitatively consistent with the energetic ground state for elastically interacting steps.
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