Physical properties of Bi₂Te₃and Sb₂Te₃films deposited by close space vapor transport

Abstract

Near-stoichiometric bismuth telluride (Bi2Te3) and antimony telluride (Sb2Te3) films were grown by the close space vapor transport (CSVT) method in a relatively simple fashion. The dependence of the film properties on the substrate temperature was explored over a wide range by keeping the source-to-substrate thermal gradient fixed at 300 °C and 350 °C for the Bi2Te3 and Sb2Te3 film growth, respectively. A Seebeck coefficient (α) of 255 µV K−1 and a power factor of 20.5 × 10−4 W K−2 m−1 were obtained for Bi2Te3 at a substrate temperature of 350 °C; meanwhile, the maxima of the above parameters for the antimony telluride films (108 µV K−1 and 3.8 × 10−4 W K−2 m−1, respectively) were reached at a substrate temperature of 450 °C.