Semiconductor Science and Technology · 2006 · 20 citations · 17 references
EngineeringElectrical EngineeringPhysicsOpticsOptoelectronicsPhotonicsLaser PhysicsOptical Properties Of SemiconductorsOptical SourcesQuantum OptoelectronicsSemiconductor LasersSemiconductor PhysicsCarrier ConfinementElectron-phonon ScatteringOptical GainOptical Gain In SemiconductorsOutput CharacteristicsPhonon ScatteringQuantum Cascade LasersSemiconductor Laser Rate Equations
We describe the application of our computational model, developed for finding the optical gain in a mid-infrared quantum cascade laser subjected to a strong magnetic field, to two distinct λ ∼ 9 µm GaAs-based structures. The additional carrier confinement induced by the field alters the transition rates for the optical- and acoustic-phonon scattering processes from the upper laser level, thus affecting the laser output properties, in particular the optical gain. Within this model, the gain is found by solving the system of rate equations, from which the carrier densities in each level are calculated. Numerical results are presented for magnetic fields between 10 and 60 T, and the band nonparabolicity is taken into account.
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Electronic properties of two-dimensional systems
Tsuneya Ando, A. B. Fowler, Frank Stern · Reviews of Modern Physics · 1982 · 7.4K citations
Natural Sciences, Chemistry, Physics +16
Continuous Wave Operation of a Mid-Infrared Semiconductor Laser at Room Temperature
Mattias Beck, Daniel Hofstetter, T. Aellen et al. · Science · 2002 · 779 citations
300 K operation of a GaAs-based quantum-cascade laser at λ≈9 μm
H. Page, C. Becker, A. Robertson et al. · Applied Physics Letters · 2001 · 255 citations