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Ultra-microindentation of silicon at elevated temperatures
109
Citations
19
References
1996
Year
EngineeringSevere Plastic DeformationHardnessSilicon On InsulatorAbstract Ultra-microindentationsWafer Scale ProcessingElectron MicroscopyMicrostructure-strength RelationshipMaterials ScienceCrystalline DefectsPlasticityMicroelectronicsThermomechanical ProcessingMicrostructureElevated TemperaturesHigh Temperature MaterialsMechanical PropertiesMicrofabricationApplied PhysicsThin FilmsVickers HardnessMechanics Of Materials
Abstract Ultra-microindentations have been performed on {110} surfaces of silicon single crystals in the temperature range 20–600°C. The indents formed were observed with transmission electron microscopy (TEM) and scanning electron microscopy (SEM). The hardness determined from the measured load-displacement curves after correcting for the elastic recovery is almost independent of temperature up to 500°C, as is found for the Vickers hardness in the literature. The TEM images, electron diffraction patterns, SEM images and their variations with temperature are investigated in connection with high-pressure studies and plasticity data. A conclusion consistent with every observation is that below 500°C, the temperature-insensitive hardness is determined by the transformation to the metallic β-tin phase, which amorphizes or nanocrystallizes during unloading while, above 500°C, plastic deformation due to dislocation activity causes temperature-dependent hardness.
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