THERMAL STRESSES IN MICROELECTRONICS SUBASSEMBLIES: QUANTITATIVE CHARACTERIZATION USING PHOTOMECHANICS METHODS

Bongtae Han

Journal of Thermal Stresses · 2003 · 68 citations · 30 references

Concepts

Abstract

Abstract Several optical methods for in-situ displacement measurement are presented as a tool to characterize thermomechanical behavior of microelectronics subassemblies. Features and recent developments of the methods are reviewed and applications to diverse problems are illustrated to demonstrate wide applicability of the methods. The whole-field displacement information, with various sensitivity and resolution scales, is ideally suited for the deformation study of a broad range of problems in microelectronics packaging. The methods are mature and they can be practiced routinely. More applications are anticipated. Keywords: Far Infrared Fizeau Interferometry Interconnections Microelectronics Packaging Microscopic Moiré Interferometry Moiré Interferometry Photomechanics Methods Shadow Moiré Twyman/Green Interferometry

References

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