Gold as a recombination centre in silicon

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	Year	Citations
Statistics of the Recombinations of Holes and Electrons W. Shockley, W. T. Read Physical Review SemiconductorsElectrical EngineeringEngineeringInjected CarriersPhysics	1952	6.3K
Resistivity of Bulk Silicon and of Diffused Layers in Silicon J.C. Irvin Bell System Technical Journal EngineeringIntegrated CircuitsSilicon On InsulatorSemiconductor DeviceSemiconductors	1962	696
Properties of Gold-Doped Silicon C. B. Collins, R. O. Carlson, C. J. Gallagher Physical Review Materials ScienceIi-vi SemiconductorEngineeringPhysicsGold-doped Silicon	1957	261
Electron-Hole Recombination Statistics in Semiconductors through Flaws with Many Charge Conditions Chih‐Tang Sah, W. Shockley Physical Review SemiconductorsElectron DensitySemiconductor TechnologyCharge ExcitationsEngineering	1958	237
Statistics of the Charge Distribution for a Localized Flaw in a Semiconductor W. Shockley, J. T. Last Physical Review EngineeringDefect ToleranceCharge TransportSemiconductorsQuantum Materials	1957	209
Recombination Properties of Gold in Silicon G. Bemski Physical Review Materials ScienceGold AtomsEngineeringPhysicsCapture Cross Section	1958	162
Electrical Properties of Gold-Doped Diffused Silicon Computer Diodes A. E. Bakanowski, Jan Förster Bell System Technical Journal Materials ScienceSemiconductorsElectrical EngineeringGold DopingReverse Recovery Time	1960	37

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