Applied Physics Letters · 1994 · 22 citations · 11 references
PhotonicsEngineeringLaser ScienceSemiconductor LasersLaser DiodesApplied PhysicsLaser ApplicationsLaser MaterialLaser ClassificationPulsed Laser DepositionActive ZoneLaser MaterialsSurface-emitting LasersMesa-stripe Injection LasersHigh Temperature OperationGainassb/algaassb Double-heterostructure LasersOptoelectronicsHigh-power Lasers
Mesa-stripe injection lasers have been prepared from liquid phase epitaxial Ga0.88In0.12As0.10Sb0.90/Al0.47Ga0.53 As0.04Sb0.96 double heterostructures having an active zone of n-type conductivity. These laser diodes could operate pulsed at heatsink temperatures up to 120 °C, and showed high characteristic temperature near ambient (T0≊110 K), comparable with theoretical value.
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