Ultrafast InGaAs/InGaAlAs multiple-quantum-well electro-absorption modulator for wavelength conversion at high bit rates

Nayla El Dahdah, Guy Aubin, Jean‐Christophe Harmand, A. Ramdane, Alexandre Shen, F. Devaux, Alexandre Garreau, B.-E. Benkelfat

Applied Physics Letters · 2004 · 15 citations · 11 references

Concepts

Abstract

We report on InGaAs/InGaAlAs electro-absorption modulators for ultrafast all-optical signal processing. The structure design is based on the use of small conduction and valence band offsets. Switching windows as short as 5 ps for a 2 V applied reverse bias have been obtained by cross-absorption modulation.

References

11