Epitaxial-grade polycrystalline Pb(Zr,Ti)O3 film deposited at low temperature by pulsed-metalorganic chemical vapor deposition

Abstract

Epitaxial-grade polycrystalline Pb(Zr,Ti)O3 (PZT) films were deposited at 415 °C by source- gas-pulsed-introduced metalorganic chemical vapor deposition. The polycrystalline PZT film with Zr/(Zr+Ti)=0.35 which was prepared on (111)Pt/Ti/SiO2/Si substrate showed highly (100)- and (001)-preferred orientations. Well-saturated ferroelectricity with a remanent polarization (Pr) and coercive field of 41.4 μC/cm2 and 78.5 kV/cm, respectively, was obtained. This Pr value is almost the same as that of epitaxially grown films at 580 °C with the same composition and orientations taking into account of the volume fraction of (100) and (001) orientations.