Orientation of CaCuO₂ Thin Films in RF Sputtering

Abstract

The orientation of CaCuO 2 films was examined under various RF sputtering conditions. Two types of crystal growth, (001) and (110) orientation, were controlled by varying the partial pressure of O 2 and Ar gas. (001) orientation was observed at lower gas pressure and (110) orientation was observed at higher gas pressure. This suggests that the orientation of CaCuO 2 film is related to the total pressure of the sputtering gas.