Thin-MIS-Structure Si Negative-Resistance Diode

Abstract

We have realized a high-switching-speed Si S-shaped negative-resistance diode having a thin MIS structure where the thickness of the SiO2 layer is less than 100 Å. It has a p-n-I (insulator)-M (metal) structure in contrast with a Shockley diode. The threshold and sustaining voltages are about 20 and 2–3 V, respectively. The regenerative nature of this device may be related to the minority carrier injection into the interface between the n layer and the insulating layer, and electron trapping in the interface states.