Photoluminescence Related to Dislocations in Annealed Czochralski-Grown Si Crystals

Abstract

The deep level photoluminescence at 4.2 K and 77 K from annealed Czochralski-grown Si crystals is investigated in relation to dislocations generated during the oxygen precipitation process. The appearance of the “rod-like defects” induces two broad bands at 0.81 and 0.88 eV. The generation of perfect dislocation loops punched out from oxygen precipitates introduces two strong and sharp lines at 0.808 and 0.874 eV. The characteristics of these signals are discussed in comparison with the dislocation-related lines observed in plastically deformed Si crystals.