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Semiconductor laser linewidth broadening due to 1/ <i>f</i> carrier noise

43

Citations

5

References

1983

Year

Abstract

The effect of low frequency (1/f) carrier noise on the linewidth of a semiconductor laser is investigated. Theoretical results suggest that broadening is strongly dependent on the 3 dB corner frequency of the 1/f noise. As an example, a linewidth of 80 MHz broadens to 110 MHz with a 5 MHz corner frequency.

References

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