Electron Slowing-Down Spectrum in Irradiated Silicon

L. C. Emerson, R. D. Birkhoff, Vernon Anderson, R. H. Ritchie

Physical review. B, Solid state · 1973 · 44 citations · 20 references

Concepts

Abstract

An electron slowing-down flux spectrum has been measured for $\ensuremath{\beta}$ particles, $\ensuremath{\delta}$ rays, and secondaries in neutron-activated silicon over the energy range from a few eV to 30 keV. The spectrum is found to be similar to slowing-down spectra generated in metals by $\ensuremath{\beta}$ particles. Absolute agreement with predictions of the Spencer---Fano theory is found for energies above 10 keV. Experimental fluxes are somewhat larger for lower energies. A companion theoretical calculation has been carried out based on model cross sections for Si. These include the effects of plasmon creation and electron-hole pair production in the valence band and excitation of electrons from the $K$ and $L$ levels. The latter processes were described on the basis of sum-rule-corrected classical cross sections. Monte Carlo calculations of the slowing-down spectrum were made. The present theory, as well as an empirically shell-corrected Spencer---Attix theory, gives spectra which are smaller than experiment by a factor of \ensuremath{\sim} 4 in the 10- to 100-eV range.

References

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