Interface and surface structure of epitaxial NiSi2 films

Abstract

Epitaxial NiSi2 films have been grown on (100) and (111) Si. Interface and surface structures have been examined by Rutherford backscattering and channeling, transmission electron microscopy, and low-energy electron diffraction. The (111) interface is remarkably flat, whereas the (100) interface has {111} facets. The NiSi2 (111) surface has a bulklike periodicity parallel to the surface, whereas the (100) surface exhibits reconstruction periodicity.