Solid State Communications · 1985 · 55 citations · 13 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsOptoelectronicsSemiconductor MaterialsOptical Properties Of SemiconductorsOptoelectronic MaterialsRare-earth-doped MaterialsSemiconductor Device MaterialsSemiconductor PhysicsWide Band Gap SemiconductorsPhotoluminescencePhotoluminescence SpectroscopySemiconductor Light-emitting Materials
13
Isoelectronic Traps Due to Nitrogen in Gallium Phosphide
D. G. Thomas, J. J. Hopfield · Physical Review · 1966 · 595 citations
Natural Sciences, Chemistry, Physics +17
Crystal Dynamics of Gallium Arsenide
John L. T. Waugh, G. Dolling · Physical Review · 1963 · 338 citations
D. G. Thomas, M. Gershenzon, J. J. Hopfield · Physical Review · 1963 · 186 citations
Excitonic Molecule Bound to the Isoelectronic Nitrogen Trap in GaP
J. L. Merz, R. A. Faulkner, P. J. Dean · Physical Review · 1969 · 95 citations
Natural Sciences, Chemistry, Physics +17