Applied Physics Letters · 1995 · 13 citations · 0 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsOptoelectronicsSemiconductor MaterialsNanostructured Electronic MaterialsOptical Properties Of SemiconductorsQuantum DotsSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor PhysicsElectroluminescenceOptical Gain In SemiconductorsPhotoluminescencePhotoluminescence SpectroscopyTime-resolved Photoluminescence Spectroscopy
Optical properties of single submonolayer InAs structures grown on GaAs (001) matrix are systematically investigated by means of photoluminescence and time-resolved photoluminescence. It is shown that the formation of InAs dots with 1 ML height leads to localization of excitons under certain submonolayer InAs coverages, which play a key role in the highly improved luminescence efficiency of the submonolayer InAs/GaAs structures.