GaAs nanoneedles grown on sapphire

Abstract

Heterogeneous integration of dissimilar single crystals is of intense research interests. Lattice mismatch has been the most challenging bottleneck which limits the growth of sufficient active volume for functional devices. Here, we report self-assembled, catalyst-free, single crystalline GaAs nanoneedles grown on sapphire substrates with 46% lattice mismatch. The GaAs nanoneedles have a 2–3 nm tip, single wurtzite phase, excellent optical quality, and dimensions scalable with growth time. The needles have the same sharp, hexagonal pyramid shape from ∼100 nm (1.5 min growth) to ∼9 μm length (3 h growth).